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Similar to other BN forms, BN nanotubes are more thermally and chemically stable than carbon nanotubes which favors them for some applications. The most stable crystalline form is the hexagonal one, also called h-BN,?
It has a layered structure similar to graphite. The interlayer "registry" of these sheets differs, however, from the pattern seen for graphite, because the atoms are eclipsed, with boron atoms lying over and above nitrogen atoms.
Still, h-BN and graphite are very close neighbors and even the BC6N hybrids have been synthesized where Sony Vaio VPCEB1DGXBI Hitachi ODD substitutes for some B and N atoms. As diamond is less stable than graphite, cubic BN is less stable than h-BN, but the conversion rate between those forms is negligible at room temperature. The wurtzite BN form w-BN has similar structure as lonsdaleite, rare hexagonal polymorph of carbon.
In both c-BN and w-BN boron Sony Vaio VPCEB1DGXBI Hitachi ODD nitrogen atoms are grouped into tetrahedra, but the angles between neighboring tetrahedra are different. The reduced electron-delocalization in hexagonal-BN is also indicated by its absence of color and a large band gap. For example, the hardness, electrical and thermal conductivity are much higher within the planes than perpendicular to them. On the contrary, the properties of c-BN and w-BN are more homogeneous.
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Both hexagonal and cubic BN are wide-gap semiconductors with a band gap energy corresponding to the UV region. Thermal stability Hexagonal and cubic and probably w-BN BN show remarkable chemical and thermal stabilities. Such annealing also crystallizes BN, the size of the crystallites increasing with the annealing temperature. Thin films of boron nitride can be obtained by chemical vapor deposition from boron trichloride and nitrogen precursors. Both experiment and theory suggest the intercalation is much more difficult for BN than for graphite. Cubic boron nitride is produced by treating hexagonal boron nitride at high pressure and temperature, much as synthetic diamond is produced from graphite.
The shock wave method is Sony Vaio VPCEB1DGXBI Hitachi ODD to produce material called heterodiamond, a superhard compound of boron, carbon, and nitrogen. Low-pressure deposition of thin films of cubic boron nitride is possible.
As in diamond growth, the major problem is to suppress the growth of hexagonal phases h-BN or graphite, respectively. Ion beam deposition, plasma-enhanced chemical vapor deposition, pulsed laser deposition, reactive sputtering, and other physical vapor deposition methods are used as well.
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An estimate for the world production is to metric tons. Therefore, h-BN lubricants can be used even in vacuum, e.
The lubricating properties of fine-grained h-BN are used in cosmetics, paints, dental cements, and pencil leads. However, because of its high price, h-BN was soon abandoned for this application. Because of its excellent thermal and chemical stability, boron nitride ceramics are traditionally used as parts of high-temperature equipment. Plastics filled with BN have less thermal expansion as well as Sony Vaio VPCEB1DGXBI Hitachi ODD thermal conductivity and electrical resistivity.
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Due to its excellent dielectric and thermal properties, BN is used in electronics e. In the automotive industry, h-BN mixed with a binder boron oxide is used for sealing oxygen sensors, which provide feedback for adjusting fuel flow. The binder utilizes Sony Vaio VPCEB1DGXBI Hitachi ODD unique temperature stability and insulating properties of h-BN. Union Carbide Corporation produces three grades of BN. Sony Vaio VPCEG15FX Intel Wireless Driver for Windows 7 bit Sony Vaio VPCEG15FX/B Hitachi ODD Firmware KS06 fo.
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